msa-0636 cascadable silicon bipolar mmic amplifiers data sheet features cascadable 50 ? gain block low operating voltage: 3.5 v typical v d 3 db bandwidth: dc to 0.9 ghz high gain: 19.0 db typical at 0.5 ghz low noise figure: 2.8 db typical at 0.5 ghz cost effective ceramic microstrip package 36 micro-x package description the msa-0636 is a high performance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a cost effective, microstrip package. this mmic is designed for use as a general purpose 50 ? gain block. typical applications include narrow and broad band if and rf amplifiers in commercial and industrial applications. the msa-series is fabricated using avagos 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility. typical biasing configuration c block c block r bias v cc > 5 v v d = 3.5 v rfc (optional) in out msa 4 1 2 3
2 msa-0636 absolute maximum ratings parameter absolute maximum [1] device current 50 ma power dissipation [2,3] 200 mw rf input power +13 dbm junction temperature 150 c storage temperature [4] C65 to 150 c thermal resistance [2,5] : jc = 155 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 6.5 mw/ c for t c > 169 c. 4. storage above +150 c may tarnish the leads of this package making it difficult to solder into a circuit. 5. the small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 19.0 20.5 22.0 ? g p gain flatness f = 0.1 to 0.5 ghz db 0.7 1.0 f 3 db 3 db bandwidth ghz 0.9 input vswr f = 0.1 to 1.5 ghz 1.4:1 output vswr f = 0.1 to 1.5 ghz 1.3:1 nf 50 ? noise figure f = 0.5 ghz db 2.8 4.0 p 1 db output power at 1 db gain compression f = 0.5 ghz dbm 2.0 ip 3 third order intercept point f = 0.5 ghz dbm 14.5 t d group delay f = 0.5 ghz psec 200 v d device voltage v 3.1 3.5 3.9 dv/dt device voltage temperature coefficient mv/ c C8.0 note: 1. the recommended operating current range for this device is 12 to 30 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 16 ma, z o = 50 ? units min. typ. max. vswr ordering information part numbers no. of devices comments msa-0636-blkg 100 bulk MSA-0636-TR1G 1000 7" reel
3 msa-0636 typical scattering parameters (z o = 50 ? , t a = 25 c, i d = 16 ma) freq. ghz mag ang db mag ang db mag ang mag ang k 0.1 .03 C178 20.5 10.59 171 C23.4 .068 5 .04 C44 1.05 0.2 .02 C177 20.3 10.31 161 C22.9 .071 8 .05 C68 1.04 0.3 .02 C164 20.0 9.96 152 C22.4 .076 14 .06 C87 1.04 0.4 .02 C116 19.6 9.55 144 C22.0 .079 19 .07 C104 1.03 0.5 .02 C100 19.2 9.08 136 C21.8 .081 21 .09 C114 1.04 0.6 .04 C89 18.7 8.59 128 C21.3 .086 24 .09 C123 1.04 0.8 .07 C96 17.7 7.66 115 C20.2 .098 29 .10 C140 1.03 1.0 .10 C108 16.6 6.79 103 C19.4 .107 31 .11 C156 1.02 1.5 .17 C134 14.2 5.13 79 C17.2 .138 30 .12 172 1.03 2.0 .24 C160 12.1 4.01 60 C15.8 .163 26 .12 148 1.04 2.5 .31 C178 10.3 3.26 48 C15.1 .175 27 .12 140 1.08 3.0 .37 166 8.7 2.72 34 C14.4 .190 24 .11 135 1.10 3.5 .42 151 7.4 2.33 21 C13.9 .203 19 .10 144 1.11 4.0 .46 139 6.2 2.04 9 C13.3 .216 16 .08 167 1.11 4.5 .48 126 5.1 1.81 C3 C12.8 .229 12 .08 C173 1.11 5.0 .52 110 4.2 1.62 C15 C12.2 .245 8 .09 C173 1.09 s 11 s 21 s 12 s 22 g p (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, i d = 16 ma. 1 02345 v d (v) figure 2. device current vs. voltage. figure 3. power gain vs. current. 0 3 6 9 12 15 18 21 0 5 10 15 20 25 gain flat to dc i d (ma) t c = +125 c t c = +25 c t c = ?5 c i d (ma) 0 5 10 15 20 25 g p (db) 10 20 25 30 15 0.1 ghz 0.5 ghz 1.0 ghz 2.0 ghz 0 1 2 3 4 5 0 1 2 3 4 5 17 18 19 20 21 ?5 ?5 +25 +85 +125 p 1 db (dbm) nf (db) gp (db) temperature ( c) figure 4. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 0.5 ghz, i d =16ma. p 1 db nf g p 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. -4 0 4 8 12 p 1 db (dbm) i d = 20 ma i d = 30 ma i d = 12 ma i d = 16 ma 2.5 2.0 3.0 3.5 4.0 nf (db) frequency (ghz) figure 6. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 4.0 i d = 12 ma i d = 16 ma, 30 ma i d = 20 ma typical performance, t a = 25 c (unless otherwise noted)
36 micro-x package dimensions 1 3 4 2 source source drain gate 2.15 (0.085) 2.11 (0.083) dia. 0.508 (0.020) 2.54 (0.100) 4.57 0.25 0.180 0.010 0.15 0.05 (0.006 0.002) notes: 1. dimensions are in millimeters (inches) 2. tolerances: in .xxx = 0.005 mm .xx = 0.13 0.56 (0.022) 1.45 0.25 (0.057 0.010) for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, limited in the united states and other countrie s. data subject to change. copyright ? 2007 avago technologies, limited. all rights reserved. obsoletes 5989-2743en av02-0304en - april 12, 2007
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